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Ten former Samsung employees arrested for industrial espionage charges for giving China chipmaker 10nm tech — executives and researchers allegedly leaked DRAM technology to China-based CXMT, resulting in trillions of losses in Korean Won

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South Korean prosecutors have arrested 10 former Samsung employees who have allegedly leaked 10-nm DRAM technology to ChangXin Memory Technologies (CXMT). The 10 individuals are accused of breaking the Act on Prevention of Divulgence and Protection of Industrial Technology, better known as the Industrial Technology Protection Act. Of the ten, five are key development personnel, which includes a former executive. Others include section heads responsible for development and research. Prosecutors say that after CXMT’s founding in 2016, it recruited executives and key people from Samsung Electronics, which was the only place mass-producing 10-nm DRAM at that time, according to The Asia Business Daily.

The leak allowed CXMT to produce China’s first 10-nm DRAM in 2023, with prosecutors arguing that the stolen technology laid the groundwork for the Chinese company’s advancements in HBM. CXMT reportedly began mass production of HBM2 memory in 2024, and that it’s expected to capture as much as 15% of the market, resulting in trillions of losses in Korean Won for both Samsung and South Korea’s national economy. This can arguably be seen already as Samsung Electronics’ sales declined by about 5 trillion Won last year.

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